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Silicon Thin Film Growth by Pulsed Plasma CVD under Near-Atmospheric Pressure

Published online by Cambridge University Press:  01 February 2011

Hirotatsu Kitabatake ,
Maki Suemitsu ,
Setsuo Nakajima ,
Tsuyoshi Uehara  and
Yasutake Toyoshima
Hirotatsu Kitabatake
Affiliation:
[email protected], Tohoku univ., CIR, Aramaki aza-Aoba aobaku, Sendai, Miyagi, 9808578, Japan, +81-22-217-5484, +81-22-217-5484
Maki Suemitsu
Affiliation:
[email protected], Tohoku univ., CIR, Japan
Setsuo Nakajima
Affiliation:
[email protected], Sekisui Chemicals Co. Ltd., Japan
Tsuyoshi Uehara
Affiliation:
[email protected], Sekisui Chemicals Co. Ltd., Japan
Yasutake Toyoshima
Affiliation:
[email protected], AIST, Energy Technology Research Institute, Japan
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Abstract

Si Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Raman ratio of 7.4 are obtained on glass substrates, while epitaxial-like growth occurs when Si(100) substrates are employed, as confirmed by Raman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.

Keywords

plasma-enhanced CVD (PECVD) (deposition)Siepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE07-14
Copyright
Copyright © Materials Research Society 2006

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References

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