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Silicon Nitride from Microwave Plasma: Fabrication and Characterization

Published online by Cambridge University Press:  28 February 2011

Yves Tessier ,
J. E. Klemberg-Sapieha ,
S. Poulin-Dandurand  and
M. R. Wertheimer
Yves Tessier
Affiliation:
Groupe des Couches Minces (GCM) and Dept.of Engineering Physics, Ecole Polytechnique, Box 6079, Station “A”, Montreal, Quebec H3C 3A7 Canada
J. E. Klemberg-Sapieha
Affiliation:
Groupe des Couches Minces (GCM) and Dept.of Engineering Physics, Ecole Polytechnique, Box 6079, Station “A”, Montreal, Quebec H3C 3A7 Canada
S. Poulin-Dandurand
Affiliation:
Groupe des Couches Minces (GCM) and Dept.of Engineering Physics, Ecole Polytechnique, Box 6079, Station “A”, Montreal, Quebec H3C 3A7 Canada
M. R. Wertheimer
Affiliation:
Groupe des Couches Minces (GCM) and Dept.of Engineering Physics, Ecole Polytechnique, Box 6079, Station “A”, Montreal, Quebec H3C 3A7 Canada
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Abstract

Plasma silicon nitride (P-SiN) films were prepared from SiH4/NH3 mixtures in a large volume microwave plasma (LMP) apparatus, at substrate temperatures T2 ranging from ambient to 250°C.Under otherwise nominally identical fabrication conditions, deposition rates were 10 to 25 times greater than those reported by others for radio- or audio-frequency plasmas.Based on film compositions, determined by elastic recoil detection (ERD), and measurements of such properties as density, refractive index, etch rate in dilute HF, and moisture permeation coefficient, our best P-SiN films (produced at T2 ≥ 200°C) are very similar to those reported in the literature.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 183
Copyright
Copyright © Materials Research Society 1986

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