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Silicon Crystallization from Annealed Cu/A-Si:H Bilayers: A Multitechnique Study
Published online by Cambridge University Press: 15 February 2011
Abstract
Silicon crystallization has been observed to occur in copper/a-Si:H thin film bilayers annealed at 280 °C. Copper-silicide formation was observed after annealing at 200 °C. Samples characterization was made by a combination of several analytical techniques: scanning electron Microscopy, Raman spectroscopy through a microscope probe, Auger electron spectroscopy, elastic recoil detection analysis and Rutherford backscattering spectrometry. The possible role of hydrogen in this process is discussed.
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