Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-19T08:22:58.083Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicide Formation by Pulsed Excimer Laser Annealing

Published online by Cambridge University Press:  17 March 2011

Connie Lew  and
Michael O. Thompson
Connie Lew
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Get access

Abstract

Silicide formation may occur at the interface of metal and a-Si films upon annealing with a pulsed excimer laser (XeCl 308 nm; 30 ns). During laser-induced melting, the melt front reaches the Si/metal interface, where liquid phase kinetics allow reaction to occur to form a silicide, despite the <100 ns time-scale. It is thought that silicide reaction would occur if TM, metal ≍ TM, a-Si (1480 ± 50K). The a-Si/metal film stacks that have been investigated include a-Si/Al/Cr, a-Si/Ti, and a-Si/W on thermally oxidized Si. Samples were laser-annealed at varying energy densities in order to determine the onset of melt, and the fluence at which Si/metal interface reaction and film ablation occurs. Rutherford backscattering (RBS), optical inspection, cross-sectional scanning transmission electron microscopy (STEM), as well as parallel and serial electron energy loss spectroscopy (EELS) were used to analyze the films. For the a-Si/Al/Cr and a-Si/W films, no reaction is observed at the Si/metal interface. With a-Si/Ti, intermixing of Si and Ti at the interface is observed, as indicated by RBS and parallel EELS analysis. Laser annealing at higher fluences and further characterization is needed to determine if this mechanism does allow for silicide reaction to take place.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.22.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Spaepen, F. and Turnbull, D., in Laser Annealing of Semiconductors, edited by Poate, J.M. and Mayer, J.W. (Academic Press, New York, 1982), p. 15–39.Google Scholar
2. Bloembergen, N. in Laser-Solid Interactions and Laser Processing-1978, edited by Ferris, S.D., Leamy, H.J., and Poate, J.M., (AIP Conference Proc. 50, Boston, PA, 1978), pp. 1–10.Google Scholar
3. Auston, D.H., Golovchenko, J.S., Simons, A.L., Slusher, R.E., Smith, P.R., Surko, C.M., Venkatesan, T.N.C. in Laser-Solid Interactions and Laser Processing-1978, edited by Ferris, S.D., Leamy, H.J., and Poate, J.M., (AIP Conference Proc. 50, Boston, PA, 1978), pp. 11–26.Google Scholar
4. Wood, R.F., White, C.W., and Young, R.T. in Semiconductors and Semimetals Vol. 23: Pulsed Laser Processing of Semiconductors, edited by Wood, R.F, White, C.W., Young, R.T., (Academic Press, New York, 1984), pp. 17–41.Google Scholar
5. Peercy, P.S., Thompson, M.O., and Tsao, J.Y. in Beam-Solid Interactions and Transient Processes, edited by Thompson, M.O., Picraux, S.T., and Williams, J.S., (Mat. Res. Soc. Proc. 74, Pittsburgh, PA, 1987) pp. 15–30.Google Scholar
6. Thompson, M.O., Galvin, G.J., and Mayer, J.W., Phys. Rev. Lett., 52 (26), 2360–2363 (1984).Google Scholar
7. Murarka, S.P., Silicides for VLSI Applications, (Academic Press, New York, 1983), p. 30.Google Scholar
8. Allmen, M.F. Von and Lau, S.S., in Laser Annealing of Semiconductors, edited by Poate, J.M. and Mayer, J.W. (Academic Press, New York, 1982), p. 439–478.Google Scholar
9. Verma, G., Tolwar, S., and Bravman, J.C., Appl. Phys. Lett., 78 (7), 925–927 (2001).Google Scholar
10. Mei, P., Boyce, J.B., Hack, M., Lujan, R.A., Johnson, R.I., Anderson, G.B., Fork, D.K., and Ready, S.E., Appl. Phys. Lett., 64 (9), 1132–1134 (1994).Google Scholar
11. Feldman, L.C. and Mayer, J.W., Fundamentals of Surface and Thin Films Analysis, (North-Holland, New York, 1986).Google Scholar
12. Ahn, C.C. and Krivanek, O.L., EELS Atlas. A joint project of the ASU HREM facility and GATAN, Inc.Google Scholar
13. Sharma, J.K.N., Chakraborty, B.R., and Shivaprasad, S.M., J. Vac. Sci. Technol.1 A, 6 (6), 3120–3124 (1988).Google Scholar