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SiGe Nanowires Grown by LPCVD using Ga-Au Catalysts

Published online by Cambridge University Press:  11 January 2012

M. Monasterio ,
A. Rodríguez ,
T. Rodríguez  and
C. Ballesteros
M. Monasterio
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
A. Rodríguez
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
T. Rodríguez
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
C. Ballesteros
Affiliation:
Física, Universidad Carlos III, 28911 Leganés (Madrid), Spain
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Abstract

The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au.

Keywords

nanostructuresemiconductingchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1408: Symposium BB – Functional Nanowires and Nanotubes , 2012 , mrsf11-1408-bb10-07
Copyright
Copyright © Materials Research Society 2012

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References

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