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Si Surface Preparation with Si Beam Irradiation on the Growth of III-V on Si

Published online by Cambridge University Press:  10 February 2011

H. Kawanami ,
K. Baskar ,
I. Sakata  and
T. Sekigawa
H. Kawanami
Affiliation:
Electrotechnical Lab., 1-1–4 Umezono, Tsukuba, Ibaraki 305–8568, JAPAN.
K. Baskar
Affiliation:
Electrotechnical Lab., 1-1–4 Umezono, Tsukuba, Ibaraki 305–8568, JAPAN.
I. Sakata
Affiliation:
Electrotechnical Lab., 1-1–4 Umezono, Tsukuba, Ibaraki 305–8568, JAPAN.
T. Sekigawa
Affiliation:
Electrotechnical Lab., 1-1–4 Umezono, Tsukuba, Ibaraki 305–8568, JAPAN.
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Abstract

The preliminary results of the effects of the Si beam irradiation for the Si surface preparation on the growth of GaAs on Si by MBE are reported. The effects are combined with thermal cyclic anneal (TCA). A slight improvement in the crystalline quality is observed on the photoluminescence spectra of the films grown with Si irradiation. In our experimental conditions, Si irradiation during the Si surface preparation has not indicated large effects on the FWHM of XRD. It is also indicated that initial substrate surface treatment affects the quality of thicker film through TCA treatment. Higher substrate temperature during Si beam irradiation is expected to indicate positive Si beam irradiation effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 61
Copyright
Copyright © Materials Research Society 1998

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