Phosphorus implanted emitters are known to have a dislocation network formed to relieve the strain caused by the lattice contraction of solute phosphorus ir, silicon. The extension of the dislocation network into the emitter-base regior, has also been related to the degradation of leakage current and the generatiol, of excess noise in an NPN bipolar transistor. The penetration of the extendeot dislocation network is shown in this paper to be related to a shear force. The shear force is the resultant of the compressive force generated from the solute phosphorus and an induced surface force generated from the thick oxide layer over the emitter formed during high temperature heat treatments. This shear force can pull the dislocation network through the junction sidewall.