No CrossRef data available.
Article contents
Shallow Donor Centers in Erbium-Implanted Silicon Subjected to High-Temperature Annealing
Published online by Cambridge University Press: 15 February 2011
Abstract
Consideration has been given to production processes of shallow donor centers formed in silicon after implantation of erbium ions or co-implantation of erbium and oxygen ions followed by annealing at 700° and 900°C. Analysis of the experimental data obtained in this work made it possible to put forward some suggestions concerning the nature of these defects.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997