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Self-Assembly Fabrication of High Performance Carbon Nanotubes Based FETs

Published online by Cambridge University Press:  15 February 2011

Emmanuel Valentin ,
Stephane Auvray ,
Arianna Filoramo ,
Aline Ribayrol ,
Marcelo Goffman ,
Laurence Capes ,
Jean-Philippe Bourgoin  and
Jean-Noel Patillon
Emmanuel Valentin
Affiliation:
Centre de Recherche Motorola, Motorola Labs, Espace Techno. Saint Aubin, 91193 Gif-sur- Yvette Cedex, France
Stephane Auvray
Affiliation:
CEA de Saclay, DSM/DRECAM/SCM, 91191 Gif-sur-Yvette, France
Arianna Filoramo
Affiliation:
Centre de Recherche Motorola, Motorola Labs, Espace Techno. Saint Aubin, 91193 Gif-sur- Yvette Cedex, France
Aline Ribayrol
Affiliation:
Centre de Recherche Motorola, Motorola Labs, Espace Techno. Saint Aubin, 91193 Gif-sur- Yvette Cedex, France
Marcelo Goffman
Affiliation:
CEA de Saclay, DSM/DRECAM/SCM, 91191 Gif-sur-Yvette, France
Laurence Capes
Affiliation:
Centre de Recherche Motorola, Motorola Labs, Espace Techno. Saint Aubin, 91193 Gif-sur- Yvette Cedex, France
Jean-Philippe Bourgoin
Affiliation:
CEA de Saclay, DSM/DRECAM/SCM, 91191 Gif-sur-Yvette, France
Jean-Noel Patillon
Affiliation:
Centre de Recherche Motorola, Motorola Labs, Espace Techno. Saint Aubin, 91193 Gif-sur- Yvette Cedex, France
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Abstract

We describe the realization of high quality self-assembled single wall carbon nanotube field effect transistors (CNTFET). A method using self-assembled monolayers (SAMs) is used to obtain high yield selective deposition placement of single wall carbon nanotubes (SWNTs) on predefined regions of a substrate. This is achieved with individual or small bundles of SWNTs and with high densities suitable for fabrication of integrated devices. We show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs. We therefore validate the self-assembly approach to reliably fabricate efficient carbon nanotube based devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 772: Symposium M – Nanotube-Based Devices , 2003 , M4.7
Copyright
Copyright © Materials Research Society 2003

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References

1. Iijima, S., Nature 354, 56 (1991)Google Scholar
2. Postma, H. W. Ch., Teepen, T., Yao, Z., Grifoni, M., and Dekker, C., Science 293, 76–79 (2001).Google Scholar
3.Cees Dekker presentation to Saturn consortium.Google Scholar
4. Derycke, V., Martel, R., Appenzeller, J., Avouris, Ph., Nano Lett. 1(9), 453 (2001).Google Scholar
5. Bachtold, A., Hadley, P., Nakanoshi, Takeshi, Dekker, Cees, Science 294, 1317–1321 (2001).Google Scholar
6. Javey, A., Wang, Q., Ural, A., Li, Y., Dai, H., Nano Lett. 2(9), 929 (2002).Google Scholar
7. Chattopadhyay, D., Galeska, I., Papadimitrakopoulos, F., J. Am. Chem. Soc. 125, 3370–3375 (2003).Google Scholar
8. Liu, J., Casavant, M.J., Cox, M., Walters, D.A., Boul, P.,Lu, W., Rimberg, A.J., Smith, K.A., Colbert, D.T., Smalley, R.E., Chem. Phys. Lett. 303, 125 (1999)Google Scholar
9. Choi, K.H.; Bourgoin, J.P.; Auvray, S.; Esteve, D.; Duesberg, G. S., Roth, S., Burghard, M., Surf. Sci. 462, 195 (2000)Google Scholar
10. Gorbunov, A. A., Friedlein, R., Jost, O., M. S.; Golden, J.; Fink, W Pompe, Appl. Phys. A, 69, 593 (1999)Google Scholar
11. Valentin, E., Esnouf, S., Capes, L., Jost, O., submitted to Chem. Mat. (2003).Google Scholar
12. Ausman, K.D., Piner, R., Lourie, O., Ruoff, R.S., J. Phys. Chem. B 104, 8911 (2000)Google Scholar
13. Kanan, S. M., Tze, W. T. Y., Tripp, C. P., Langmuir 18, 6623 (2002)Google Scholar
14. Kong, J., Dai, H., J. Phys. Chem. B 105, 2890 (2001)Google Scholar
15. Diehl, M. R., Yaliraki, S. N., Beckman, R. A., Barahona, M., Heath, J. R., Angew. Chem. Int. 41, 353 (2002)Google Scholar
16. Zhang, Y., Ichibashi, T., Landree, E., Nihey, F., Ijima, S., Science 285, 1719 (1999)Google Scholar
17. Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chan, K. K., Tersoff, J., Avouris, Ph., Phys. Rev. Lett., 87, 256805 1–4 (2001).Google Scholar
18. Wind, S. J., Appenzeller, J., Martel, R., Derycke, V., Avouris, Ph., Appl. Phys. Lett., 80, 3817 (2002)Google Scholar
19. Nihey, F., Hongo, H., Yudasaka, M., Ijima, S., Jpn. J. Appl. Phys. 41, 1049 (2002)Google Scholar