Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:47:37.685Z Has data issue: false hasContentIssue false
  • English
  • Français

Self Annealing Ion Implantation in thin Silicon Films

Published online by Cambridge University Press:  26 February 2011

J. D. Rubio ,
R. P. Vijay  and
R. R. Hart
J. D. Rubio
Affiliation:
Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843
R. P. Vijay
Affiliation:
Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843
R. R. Hart
Affiliation:
Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843
Get access

Abstract

The self annealing phenomenon was studied utilizing 1 cm diameter, 1 μm thick, <100> oriented silicon films. Previous results established the viability of the self annealing process for medium energy argon beams incident on similar targets [1]. In the current work, doubly aligned backscatter spectra were obtained to improve the sensitivity of the residual lattice damage measurements. In addition, some implantations were performed at elevated temperatures to independently determine the effect of the flux and the sample temperature on the self annealing process. The results showed strong correlations between the implantation flux, sample temperature and the residual lattice damage. Two distinct temperature regions were observed above and below 330 °C with corresponding activation energies of 1.5 eV and 0.1 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 253
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rubio, J.D., Vijay, R.P., Hart, R.R. and Pearce, J.D., Mat. Res. Soc. Symp. 128 (1989) 575.Google Scholar
2. Gat, A. and Gibbons, J., Appl. Phys. Lett. 32 (1978) 142.Google Scholar
3. Regolini, J., Gibbons, J., Sigmon, T. and Pease, R., Appl. Phys. Lett. 34 (1979) 410.Google Scholar
4. Lau, S., Mayer, J. and Tseng, W., in: Laser-Solid Interactions and Laser Processing-1978, eds., Ferris, S., Leamy, H. and Poate, J., (American Institute of Physics, N.Y., 1979) p.84.Google Scholar
5. Chu, W., Mayer, J. and Nicolet, M., Backscattering Spectrometry, (Academic Press, Orlando, FL, 1978) p.257.Google Scholar