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Selective Intermixing of Ion Irradiated Semiconductor Heterostructures

Published online by Cambridge University Press:  15 February 2011

R. D. Goldberg ,
I. V Mitchell ,
P. G. Piva ,
H. H. Tan ,
C. Jagadish ,
P. J. Poole ,
G. C. Aers ,
S. Charbonneau ,
G. C. Weatherly  and
M. B. Johnson
...Show all authors
R. D. Goldberg
Affiliation:
Department of Physics and Astronomy, The University of Western Ontario, Ontario, N6A 3K7, Canada
I. V Mitchell
Affiliation:
Department of Physics and Astronomy, The University of Western Ontario, Ontario, N6A 3K7, Canada
P. G. Piva
Affiliation:
Department of Physics and Astronomy, The University of Western Ontario, Ontario, N6A 3K7, Canada
H. H. Tan
Affiliation:
Department of Electronic Materials Engineering, RSPSE, Australian National University, ACT, 0200, Australia
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, RSPSE, Australian National University, ACT, 0200, Australia
P. J. Poole
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, K IA 0R6, Canada
G. C. Aers
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, K IA 0R6, Canada
S. Charbonneau
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, K IA 0R6, Canada
G. C. Weatherly
Affiliation:
Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario, L8S 4Ll, Canada
M. B. Johnson
Affiliation:
Department of Electronic Materials Engineering, RSPSE, Australian National University, ACT, 0200, Australia
M. Gal
Affiliation:
Department of Electronic Materials Engineering, RSPSE, Australian National University, ACT, 0200, Australia
A. J. Springthorpe
Affiliation:
School of Physics, The University of New South Wales, Sydney, N.S.W., 2052, Australia
H. Chen
Affiliation:
Nortel Technology, P.O. Box 3511 Station C., Ottawa, Ontario, KIY 4H7, Canada
R. M. Feenstra
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213, USA
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Abstract

Significant progress has been realized in the use of quantum well intermixing (QWI) as a method for tailoring the bandgap energies of optoelectronic devices. Intermixing can be driven by an ion implantation process, an approach that appeals because of its simplicity, its planarity and its adaptability to selective area processing. Despite its success, the advantages of irradiation induced QWI need to be tested further and we report here current results of three research activities which address a) the existence or not of a simple scaling relationship which connects intermixing in a given QW structure for any ion species; b) reproducibility of intermixing in identical QW structures which have been obtained from different growth systems; and c) intermixing for above the well versus through the well implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 15
Copyright
Copyright © Materials Research Society 1999

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