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Selective Growth of Poly-Diamond Thin Films Using Selective Damaging by Ultrasonic Agitation on a Variety of Substrates
Published online by Cambridge University Press: 26 February 2011
Abstract
Polycrystalline diamond thin films have been selectively deposited on Si, SiO2, Si3 N4, Ta, Mo, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Novel processes were developed to selectively damage the polished substrates by ultrasonic agitation. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.
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- Copyright © Materials Research Society 1991
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