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Selective Copper Plating in Silicon Dioxide Trenches with Metal Plasma Immersion Ion Implantation

Published online by Cambridge University Press:  16 February 2011

Meng-Hsiung Kiang ,
Carey A. Pico ,
Michael A. Lieberman ,
Nathan W. Cheung ,
X. Y. Qian  and
K. M. Yu
Meng-Hsiung Kiang
Affiliation:
Department of Electrical Engineering and Computer Sciences University of California, Berkeley, CA 94720
Carey A. Pico
Affiliation:
Department of Electrical Engineering and Computer Sciences University of California, Berkeley, CA 94720
Michael A. Lieberman
Affiliation:
Department of Electrical Engineering and Computer Sciences University of California, Berkeley, CA 94720
Nathan W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences University of California, Berkeley, CA 94720
X. Y. Qian
Affiliation:
Applied Materials Inc. 2727 Augustine Drive, Santa Clara, CA 95054
K. M. Yu
Affiliation:
Lawrence Berkeley Laboratory University of California.Berkeley, CA 94720
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Abstract

Selective deposition of copper in SiO2 trenches has been carried out using plasma immersion ion implantation and electroless Cu plating. To form the seed layer for electroless Cu plating on SiO2 , sputtered Pd and Si atoms were partially ionized by the Ar plasma and then deposited at bottoms of SiO2 trenches; Ar ions also assisted the ion beam mixing of the deposited Pd/Si films with the SiO2 substrate. We found a threshold Pd dose of 2–3×1014/cm2 is required to initiate the electroless plating of Cu. By controlling the Pd dose and the tapering angle of the SiO2 trench sidewalls, 1 μm wide Cu filled lines with flat surfaces suitable for planarized multilevel metallization were successfully fabricated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 377
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Murarka, S.P. in Tungsten and Other Advance Metals for ULSI Applications 1990, edited by Smith, G.C. and Blumenthal, R. (Mater. Res. Soc. Proc., Dallas, TX, 1990) pp. 179–187.Google Scholar
[2] Awaya, A. and Arita, Y., Proceedings of VLSI Symposium, Kyoto, Japan, 1989, pp. 103–104.Google Scholar
[3] Pal, P.L. and Ting, C.H., IEEE Electron Device Lett., 10 (9), 423–425 (1989).Google Scholar
[4] Thomas, D.C., Cheung, N.W., Brown, I.G., and Wong, S.S. in Tungsten and Other Advance Metals for VLSIIULSI Applications V. edited by Wong, S.S. and Furukawa, S. (Mater. Res. Soc. Proc., San Mateo, CA, 1989) pp. 233–242.Google Scholar
[5] Qian, X.Y., Kiang, M.H., Huang, J., Carl, D., Cheung, N.W., Lieberman, M.A., Brown, I.G., Yu, K.M., and Current, M.I., to be published in Nuclear Methods and Instruments, 1991.Google Scholar
[6] Cheung, N.W., to be published in Nuclear Instruments and Methods, 1991.Google Scholar
[7] Qian, X.Y., Kiang, M.H., Cheung, N.W., Lieberman, M.A., Brown, I.G., Godechot, X., and Yu, K.M., to be published in Nuclear Methods and Instruments, 1991.Google Scholar
[8] Sard, R., J. Electrochem Soc., 7, 864 (1970).Google Scholar