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Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

D.L. Dreifus ,
Y. Lansari ,
J.W. Han ,
S. Hwang ,
J.W. Cook Jr.  and
J.F. Schetzina
D.L. Dreifus
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh NC 27695-7911
Y. Lansari
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
J.W. Han
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
S. Hwang
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
J.W. Cook Jr.
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
J.F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
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Abstract

II-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 159
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Irvine, S.J.C., Hill, H., Hails, J.E., Mullin, J.B., Barnett, S.J., Blackmore, G.W., and Dosser, O.D., (to be published in J. Vac. Sci. Technol. A, 1990).Google Scholar
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