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Sb-Doped Polycrystalline Si Obtained by Means of Sb and Si Thin-Film Reactions

Published online by Cambridge University Press:  22 February 2011

S. F. Gong ,
A. E. Robertsson ,
S.-E. Hörnström ,
G. Radnoczi  and
H. T. G. Hentzell
S. F. Gong
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
A. E. Robertsson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
S.-E. Hörnström
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
G. Radnoczi
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
H. T. G. Hentzell
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Abstract

We have grown Sb-doped poly-Si by thin-film reactions between Sb and amorphous Si (a-Si). The reactions and microstructures of the films were investigated by transmission electron microscopy (TEM) during in situ annealing and Auger electron spectroscopy (AES). The reactions either resulted in an amorphous Sb-Si (a-Sb-Si) alloy or caused crystallization of a-Si at low temperatures, depending on the film thickness of the a-Si layer as well as the heating rate. The electrical properties of the as-deposited and the annealed thin multi-layers deposited on SiO2 layer were determined using Hall measurements. After annealing at 1375 K for 60 minutes, Sb-doped poly-Si with a resistivity of 1.4×10−2 ohm-cm was obtained. A p-n junction was formed in a p-type Si substrate by using an a-Si/Sb/a-Si multi-layer as a diffusion source. The doping concentration in the Si substrate was obtained using secondary ion mass spectrometry (SIMS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 193
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1) Schaber, H., Criegern, R.V., and Weitzel, I., J. Appl. Phys. 58, 4036 (1985).CrossRefGoogle Scholar
2) Ashburn, P., and Soerwirdjo, B., Solid State Electron, 24, 475 (1981)Google Scholar
3) Jasquin, W. J. M. J., Boudewijn, P. R., and Tamminga, Y., Appl. Phys. Lett. 43, 960 (1983)Google Scholar
4) Arienzo, M., Komen, Y., and Michel, A.E., J. Appl. Phys. 55, 365 (1984)Google Scholar
5) Wong, C. Y., Michel, A. E., Isaac, R. D., Kastl, R. H., and Mader, S. R., J. Appl. Phys. 55, 1131 (1984).CrossRefGoogle Scholar
6) Gong, S. F., Hentzell, H. T. G., Robertsson, A. E., Hultman, L., Hbrnstrdm, S.-E., and Radnoczi, G., J. Appl. Phys. 62, 3726 (1987)Google Scholar
7) Einspruch, N. G. and Larrabee, G. B., VLSI Electronic Microstructure Science (Academic, New York, 1983), Vol.6, p.49 Google Scholar
8) Massalski, T. B., Binary Alloy Phase Diagrams, Volume 1–2 (American Society for Metals, Ohio, 1986)Google Scholar