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Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si1−x−yGexCy Thin Films on Si(100) Substrate
Published online by Cambridge University Press: 10 February 2011
Abstract
The thermally oxidized Si1−x−yGexCy thin films were grown on silicon substrates by Plasma-enhanced Chemical Vapor Deposition (PECVD) and then wet oxidized at 800°C for 20 minutes. Photoluminescence spectra of the samples were measured at room temperature under 250nm excitation. Two ultraviolet photoluminescence bands with the peaks at ∼370nm and ∼396nm were observed in the oxidized samples. Possible mechanism of this photoluminescence is discussed.
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