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The Role of Hydrogen in Semi-Insulating Inp

Published online by Cambridge University Press:  10 February 2011

Yujie Han ,
Xunlang Liu ,
Jinghua Jiao ,
Jiajun Qian ,
Yonghai Chen ,
Zhanguo Wang  and
Lanying Lin
Yujie Han
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, P.R.CHINA, [email protected]
Xunlang Liu
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, P.R.CHINA, [email protected]
Jinghua Jiao
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, P.R.CHINA, [email protected]
Jiajun Qian
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, P.R.CHINA, [email protected]
Yonghai Chen
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, P.R.CHINA, [email protected]
Zhanguo Wang
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, P.R.CHINA, [email protected]
Lanying Lin
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, P.R.CHINA, [email protected]
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Abstract

Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimer and other infrared absorption lines, tentatively be assigned to hydrogen related defects were investigated by FTIR. Hydrogen can passivate imperfections, thereby eliminating detrimental electronic states from the energy bandgap.Incorporated hydrogen can introduce extended defects and generate electrically-active defects. Hydrogen also can acts as an actuator for creating of antistructure defects. Isolated hydrogen related defects(e.g. H12+) may play an important role in the conversion of the annealed wafers from semiconducting to the semi-insulating behavior. H2+ may be a deep donor, whose energy level is very near the iron deep acceptor level in the energy gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 247
Copyright
Copyright © Materials Research Society 1998

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References

1. Pajot, B., Song, C-Y, Darwich, R., Gendron, F. and Ewels, C., Solid State Commun.95, 852(1995).Google Scholar
2. Darwich, R., Pajot, B., Rose, B., Robein, D., Theys, B., Porte, C. and Gendron, F., Phys. Rev. B 48, 17789(1993).Google Scholar
3. Pajot, B., Chevallier, J., Jalil, A., and Rose, B., Semicond. Sci. Technol. 4, 91(1989).Google Scholar
4. Zach, F. X., Haller, E. E., Gabbe, D., Iseler, G., Bryant, G. G., and Bliss, D. F., J. Electron. Mater. 25, 334(1996).Google Scholar
5. M., Caldas, J., Dabrowski, A., Fazzio, and M., Scheffler, Phys. Rev. Lett. 65, 2046(1990).Google Scholar
6. Cavenett, B. C., Kana-ah, A., Deiri, M., Kennedy, T. A. and Wilsey, N. D., J. Phys. C 18, L473(1985).Google Scholar
7. Van de Walle, C. G., Bar-Yam, Y. and Pantelides, S. T., Physi. Rev. Lett. 60, 2761(1988).Google Scholar
8. Van de Walle, C. G., Denteneer, P. J. H., Bar-Yam, Y. and Pantelides, S. T., Phys. Rev. B 39, 10791(1989).Google Scholar
9. Johnson, N. M. and Herring, C., in Proc.Third International Conference on Shallow Impurities in Semiconductors, Linkoping, 1988, Edited by Monemar, B., IOP Conference Sewreies(IOP Lopndon, 1989), p.415.Google Scholar
10. Chang, K. J. and Chadi, D. J., Phys. Rev. B 40, 11644(1989).Google Scholar
11. Clerjaud, B., Gendron, F., Krause, M., and Ulrici, W., Phys. Rev. Lett. 65, 1800, (1990).Google Scholar
12. Pavesi, L., Giannozzi, P., and Reinhart, F. K., Phys. Rev. B 42, 1864, (1990).Google Scholar