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RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

Published online by Cambridge University Press:  01 February 2011

Ali Mahmud ,
T. S. Kalkur  and
N. Cramer
Ali Mahmud
Affiliation:
Dept. of Electrical and Computer Engineering, 1420 Austin Bluffs Parkway, Colorado Springs, CO 80918
T. S. Kalkur
Affiliation:
Dept. of Electrical and Computer Engineering, 1420 Austin Bluffs Parkway, Colorado Springs, CO 80918
N. Cramer
Affiliation:
Applied Ceramics Research, 1420 Owl Ridge Road, Colorado Springs, CO 80918
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Abstract

Perovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G1.2
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Lee, Y.C., Lee, W.S., and Shieu, F.S., J. Mater. Sci. 37, 2699 (2002).Google Scholar
2. Yi, Wu, Kalkur, T.S., Kammerdiner, Lee, Philofsky, Elliott and Rywak, Tony, Appl. Phys. Lett., 78, 3517 (2001).Google Scholar
3. Cramer, N., Philofsky, E., Kammerdiner, L. and Kalkur, T.S., Appl. Phys. Lett., 84, 771 (2004).Google Scholar
4. Leidke, P., Grossmann, M. and Waser, R., Appl. Phys. Lett., 77, 245 (2000).Google Scholar
5. Hansen, P., Hennings, D. and Schreinemacher, H., J. Electroceramics, 2, 85 (1998).Google Scholar
6. Cramer, N., Philofsky, E., Kammerdiner, L., and Kalkur, T.S., Integ. Ferroelectrics, (in press, 2004).Google Scholar
7. Cramer, N., Philofsky, E., Kammerdiner, L. and Kalkur, T.S., IEEE MTT-S International Microwave Symposium Digest, 1, 269–272 (2004).Google Scholar
8. Shin, J.C., Park, J., Hwang, C.S. and Kim, H.J., J. Appl. Phys., 86, 506 (1999).Google Scholar