Many semiconductor processing facilities rely heavily on capacitance voltage (CV) analysis for verification of oxidation furnace cleanliness. CV provides an accepted set of electrical test parameters (Vfb, Qm, Tox Dit, etc). that can be used to monitor tube contamination levels during processing. However, two significant drawbacks of the CV technology are a) the need for costly and time-consuming deposition of MOSCAF (Metal Oxide Semiconductor Capacitor) electrodes, and b) the reduction in electrically active contaminants due to the MOSCAP processing sequence. A commercially available noncontacting technology called corona-oxide-semiconductor (COS) analysis is described here which does not require post-oxidation processing, but does measure the fundamental electrical test parameters required for process control and development [2]. The noncontact COS technology is shown to be significantly more responsive to intentionally introduced electrically active contaminants than poly MOSCAP CV. The data indicate that this difference in sensitivity is due to the immediate, processing-free nature of the COS technology.