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Removable External Seeding for Solid phase Epitaxy of Amorphous Silicon on Glass Substrates

Published online by Cambridge University Press:  21 February 2011

Atsutoshi Doi ,
Takanori Tsuda ,
Masa-ICHI Kumikawa ,
Yoshiyuki Nakamizo  and
Kazuyuki Ueda
Atsutoshi Doi
Affiliation:
Dept. of Electrical Engineering, Kinki University, Higashi-Osaka, Osaka 577, Japan
Takanori Tsuda
Affiliation:
Dept. of Electrical Engineering, Kinki University, Higashi-Osaka, Osaka 577, Japan
Masa-ICHI Kumikawa
Affiliation:
Electronic Devices Division, Ricoh Co., Ltd., 13–1, Himemurocho, Ikeda, Osaka 563, Japan
Yoshiyuki Nakamizo
Affiliation:
Central Research Laboratory, Hokuriku Electric Industry Co‥Ltd., Osawanomachi, Kaminiikawa, Toyama 939–22, Japan
Kazuyuki Ueda
Affiliation:
Dept. of Applied Physics, Osaka University, Suita, Osaka 565, Japan
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Abstract

A new method for obtaining a planar silicon film on glass substrates (SOG) with controlled crystal orientation has been introduced. This technique uses solid phase epitaxy (SPE) with external seed to fabricate the orientation-controlled SOG structure. Heat treatment of amorphous SOG substrate in contact with mesa striped Si seed crystal was performed at 540°C for 16 hours to form the SPE layer. The planar surface of the SOG structure is due to the most important feature of the present technique-the separation of the seed from the substrate after SPE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 621
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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