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Relationship Between Interfacial Adhesion and Dielectric Reliability of Cu Alloy Films

Published online by Cambridge University Press:  01 February 2011

Seol-Min Yi ,
Kwang-Ho Jang ,
Yong-Hak Huh ,
Young-Bae Park  and
Young-Chang Joo
Seol-Min Yi
Affiliation:
[email protected], Seoul National University, Material Science and Engineering, Seoul Nat'l Univ. 30-506, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-744, Korea, Republic of, +82-2-873-5818, +82-2-883-8197
Kwang-Ho Jang
Affiliation:
[email protected], Seoul National University, Material Science and Engineering, Seoul Nat'l Univ. 30-506, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-744, Korea, Republic of
Yong-Hak Huh
Affiliation:
[email protected], Korea Research Institute of Standard and Science, DaeJeon, N/A, 305-340, Korea, Republic of
Young-Bae Park
Affiliation:
[email protected], Andong National University, Andong, N/A, 760-749, Korea, Republic of
Young-Chang Joo
Affiliation:
[email protected], Seoul National University, Seoul, N/A, 151-744, Korea, Republic of
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Abstract

Cu alloy has been suggested to enhance reliabilites in future technology. To evaluate the effects of alloying elements on electrical and mechanical reliabilities, Mg and Ru were chosen as alloying elements. Because alloying elements to Cu should not increase resistivity over comparable value to pure Cu, the resistivity of pure Cu, Cu-0.7at%Mg alloy and Cu-2.2at%Ru alloy was compared. Time dependent dielectric breakdown (TDDB) under bias-temperature stress (BTS) tests were accomplished to evaluate the effect of alloying elements on dielectric reliability. The standard four point bending experiments were conducted to measure critical interfacial adhesion energy of conducting metal to SiO2. The relationship of the effect of alloying elements on reliabilities to distribution of alloying elements was analyzed using Auger Electron Spectroscopy (AES). Our results show alloying Mg to Cu can enhance reliability by forming self-passivating layer on its surface and interface while Ru does not.

Keywords

alloyadhesiondielectric properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-18
Copyright
Copyright © Materials Research Society 2006

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References

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