Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T18:33:00.241Z Has data issue: false hasContentIssue false
  • English
  • Français

Reducing Dislocation Density by Sequential Implantation of Ge and C in Si

Published online by Cambridge University Press:  25 February 2011

Seongil Im ,
Jack Washburn ,
Ronald Gronsky ,
Nathan W. Cheung ,
Kin Man Yu  and
Joel W. Ager
Seongil Im
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Jack Washburn
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Ronald Gronsky
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Nathan W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
Kin Man Yu
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
Joel W. Ager
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
Get access

Abstract

Carbon implantation was performed after high dose(5 x 1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial(SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Geinduced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 139
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jain, S. C. and Hayes, W., Semicon. Sci. Technol. 6, 547–576, (1991)Google Scholar
2. Strained-Layer Superlattices : Materials Science and Technology, Semiconductors and Semimetals, Vol.33, edited by Pearsall, Thomas P., ACADEMIC PRESS, INC., 223–304 (1991)Google Scholar
3. Yu, K. M., Brown, I. G. and Seongil Im, Mat. Res. Soc. Symp. Proc., 235, 293(1992)CrossRefGoogle Scholar
4. Paine, D.C., Howard, D. J., and Stoffel, N. G., J. Electronic Materials, 20(10), 735(1991)Google Scholar
5. Fukami, Akira, Shoji, Ken-ichi, Nagano, Takahiro and Yang, Cary Y., Microelectronic Engineering, 15, 15 (1991)Google Scholar
6. Fukami, Akira, Shoji, Ken-ichi, Nagano, Takahiro and Yang, Cary Y., Appl. Phys. Lett., 5(22), 2345(1990)Google Scholar
7. Properties of Silicon, EMIS Data reviews series No.4, published by INSPEC, The Institution of Electrical Engineers, New York, (1988) p. 285 Google Scholar
8. Im, S., Washburn, J, Gronsky, R., Cheung, N. W. and Yu, K. M., “Defect Control During Solid Phase Epitaxial Growth of SiGe Alloy Layers”, submitted to Appl. Phys. Lett. 1993 Google Scholar
9. Ira, S., Washburn, J, Gronsky, R., Cheung, N. W. and Yu, K. M., MRS Symp. Proc. 1992 (in press)Google Scholar
10. Prussin, S. and Jones, K. S., J. Electrochem. Soc., 137(6), 1912 (1990)CrossRefGoogle Scholar
11. Eberl, K., Iyer, S. S., Zollner, S., Tsang, J.C. and LeGoues, F. K., Appl. Phys. Lett., 60(24), 3033(1992)Google Scholar