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Rapid Thermal Annealing in III-V Compounds
Published online by Cambridge University Press: 25 February 2011
Abstract
Progress in applying rapid thermal annealing for activating implants is surveyed. Advantages to be gained through curtailing substrate semiinsulating loss, enhancing heavy n-type activation, and in reducing the diffusive redistribution of p-type implants are discussed in detail. Consideration is given to encapsulation requirements and the role of stoichiometry in activation. While the emphasis is on GaAs, work on InP and InGaAs has also been included.
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- Copyright © Materials Research Society 1985
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