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Questions And Answers On The Activation Strain
Published online by Cambridge University Press: 15 February 2011
Abstract
The activation strain tensor describes the effect of nonhydrostatic stresses on atomic or interfacial Mobilities. It has been measured for solid phase epitaxial growth of crystalline Si (001) into amorphous Si. The activation strain concept is explained and some subtle points are discussed. Implications for proposed mechanisms of solid phase epitaxy are reviewed, and new implications for combined bulk and interfacial control are presented. Questions raised during the oral presentation are answered.
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- Copyright © Materials Research Society 1994
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