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Quantitative EELS Analysis of AlGaN Nanowires Grown by Ni Promoted MBE on Sapphire Substrate

Published online by Cambridge University Press:  01 February 2011

Leonardo Lari ,
Robert T Murray ,
Mhairi H Gass ,
Timothy J Bullough ,
Paul R Chalker ,
Caroline Chèze ,
Lutz Geelhaar  and
Henning Riechert
Leonardo Lari
Affiliation:
[email protected], University of Liverpool, Dept. of Engineering, George Holt Building, Liverpool, L69 3GH, United Kingdom
Robert T Murray
Affiliation:
c/o [email protected], University of Liverpool, Dept. of Engineering, Liverpool, L69 3GH, United Kingdom
Mhairi H Gass
Affiliation:
[email protected], SuperSTEM Laboratory, STFC Daresbury, Daresbury, WA4 4AD, United Kingdom
Timothy J Bullough
Affiliation:
[email protected], University of Liverpool, Dept. of Engineering, Liverpool, L69 3GH, United Kingdom
Paul R Chalker
Affiliation:
[email protected], University of Liverpool, Dept. of Engineering, Liverpool, L69 3GH, United Kingdom
Caroline Chèze
Affiliation:
[email protected], Qimonda, Munich, D-81730, Germany
Lutz Geelhaar
Affiliation:
[email protected], Qimonda, Munich, D-81730, Germany
Henning Riechert
Affiliation:
[email protected], Qimonda, Munich, D-81730, Germany
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Abstract

Quantitative analysis of the elemental distributions within AlGaN has been investigated using electron energy loss spectroscopy in a scanning transmission electron microscopy. The nanowires were grown on c-sapphire by radio frequency plasma assisted molecular beam epitaxy. Crystallographic and compositional analyses of the nickel seeds used to promote the nanowire type growth yielded values of lattice spacings within the seeds remaining at the growth tip which were attributed to either (002) NiO, (111) Ni3Ga or (111) Ni-Ga solid solution. The seeds structures exhibited a metallic core encompassed by an oxide shell. The relative gallium and nickel concentrations were quantified by EELS analyses and were found to be consistent with the equilibrium phase α' of Ni3Ga or Ni-Ga solid solution. No nitrogen was observed within the seeds, which is predicted thermodynamically due to the instability of Ni-N compounds at the NW growth temperature used in this study. No aluminium was detected at the tip of nanowires. These measurements are compared with previous studies made concerning pure GaN nanowires. The Al distribution along the nanowire length was measured and is discussed in respect of a possible Al incorporation mechanism.

Keywords

electron energy loss spectroscopy (EELS)nanostructuremolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1026: Symposium C – Quantitative Electron Microscopy for Materials Science , 2007 , 1026-C01-05
Copyright
Copyright © Materials Research Society 2008

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