Hostname: page-component-7bb8b95d7b-w7rtg Total loading time: 0 Render date: 2024-09-18T00:50:35.176Z Has data issue: false hasContentIssue false

Pulsed Laser Cleaning of Antimony Single Crystal <111> Surface

Published online by Cambridge University Press:  25 February 2011

Etienne J. Petit
Affiliation:
L.I.S.E., Facultés UniversitairesN-D de la Paix, rue de Bruxelles, 61, B–5000 NAMUR (Belgium)
Roland Caudano
Affiliation:
L.I.S.E., Facultés UniversitairesN-D de la Paix, rue de Bruxelles, 61, B–5000 NAMUR (Belgium)
Get access

Abstract

The<111> face of an antimony single crystal was irradiated under ultra-high-vacuum conditions by the 193 rn radiation of a high-power excimer laser. The effects of the laser beam on the sample as a function of the light Energy Density (ED) and of theannealing Repetition Number are presented.

Surface studies by Auger electron spectroscopy, scanning electron microscopy and low energy electron diffraction show that an atomically clean and well ordered surface can be produced by t is method. A strong chemical reduction is induced by pulsed aser annealing above 100 to 130 mI/cm2. Surface analysis shows that, for an ED less than 500 mJ/cm2 the surface evaporates without melting deeper than 200 rim. Evidences for oxide modification and for organic molecule desorption were observed even after irradiations with an ED as low as 45 mJ/cm2.

The surface reduction is described by a thermal model involving surface heating and subsequent evaporation of the oxide layer. The desorption and diffusion processes may involve both thermal and photolytic mechanisms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jona, F. Surf. Sci. 8, 57 (1967).Google Scholar
2. Apker, I. Phys. Rev. 76, 270 (1949).Google Scholar
3. Ready, J.F., Effects of High-power Laser Irradiation (Acad. Press, London, 1971).Google Scholar
4. Galvin, G.J., Thompson, M.O., Mayer, J.W., Peercy, P.S., Hammond, R.B.,in Laser Processing of Semiconductor Devices, ed by Tang, C.C. (SPIE Proceed. 385, 1983).Google Scholar
5. Dereux, A., Peremans, A., Vigneron, J-P., Darville, J., Gilles, J-M., J. Elec. Spectr. Rel. Phen., 45,261 (1987).Google Scholar
6. Smitheels, C.J. Metals Reference Book, 5th. ed (Butterworths, London & Boston, 1976).Google Scholar
7. Maroie, S., Colette, H., Gabelica, Z., Verbist, J., Nagy, B., J. Acta Chim. Hung. 1–19 (2-3) 167 (1985).Google Scholar
8. Haglund, R.F., Mendenhall, M.H., Tolk, N.H., Betz, G., Husinsky, W., Nucl. Instr. Meth. Phys. Res. B32, 321 (1988) J. Siejka, R. Srinivasan, J. Perriere, in Eneroy Beam-Solid Interactions and Transient Thermal Processing (MRS 1985) ed. by V.T. Nguyen, A.G. Cullis (Les éditions de physique, Paris, 1985), p. 139.Google Scholar