Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T18:08:37.819Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Modulation-Doped HgCdTe Superlattices

Published online by Cambridge University Press:  21 February 2011

S. Hwang ,
Z. Yang ,
Y. Lansari ,
J.W. Han ,
J.W. Cook Jr. ,
N.C. Giles  and
J.F. Schetzina
S. Hwang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
Z. Yang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
Y. Lansari
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
J.W. Han
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
J.W. Cook Jr.
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
N.C. Giles
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
J.F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
Get access

Abstract

Photoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 263
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Esaki, L. and Tsu, R., IBM Research Note RC-2418 (1969).Google Scholar
2. Dingle, R., Stormer, H.L., Gossard, A.C., and Wiegmann, W., Appl. Phys. Lett. 37, 805(1978).Google Scholar
3. “The Technology and Physics of Molecular Beam Epitaxy”, edited by Parker, E.H.C., (Plenum Press, New York, 1985).Google Scholar
4. Boukerche, M., Wijewamasuniya, P.S., Sivananthan, S., Sou, I.K., Kim, Y.J., Mahavadi, K.K., and Faurie, J.P., J. Vac. Sci. Technol. A 6, 2830 (1988).Google Scholar
5. Bicknell, R.N., Giles, N.C., and Schetzina, J.F., Appl. Phys. Lett. 49, 1095 (1986).Google Scholar
6. Han, J.W., Hwang, S., Lansari, Y., Harper, R.L., Yang, Z., Giles, N.C., Cook, J.W. Jr., Sen, S., and Schetzina, J.F., Appl. Phys. Lett. 54, 63 (1989).Google Scholar
7. Han, J.W., Hwang, S., Lansari, Y., Harper, R.L., Yang, Z., Giles, N.C., Cook, J.W. Jr., Sen, S., and Schetzina, J.F., J. Vac. Sci. Technol. A 7, 305 (1989).Google Scholar
8. Harris, K.A., Hwang, S., Blanks, D.K., Cook, J.W. Jr., Otsuka, N., and Schetzina, J.F., J. Vac. Sci. Technol. A 4, 2061(1986).Google Scholar