Article contents
Properties of CVD Diamond/Metal Interface
Published online by Cambridge University Press: 26 February 2011
Abstract
Electric properties of the interface between metal and semiconducting CVD diamond formed by microwave plasma chemical vapour deposition (CVD) have been investigated. Much better rectifying property due to Schottky barrier has been obtained in the films formed with CO(5%)/H2 compared with CH4(0.5%)/H2. A high breakdown voltage (200 V) and a high rectification ratio (105) have been observed at the evaporated Al/diamond interfaces formed with CO(5%)/H2. In the point contact interfaces, where the metal-carbon reaction is not expected at room temperature, the rectifying and ohmic property depends on the electronegativity of metals.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1990
References
REFERENCES
- 2
- Cited by