Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:40:51.468Z Has data issue: false hasContentIssue false
  • English
  • Français

Processing-Induced Stresses And Curvature In Patterned Lines On Silicon Wafers

Published online by Cambridge University Press:  15 February 2011

Y-L. Shen ,
S. Suresh  and
I. A. Blech
Y-L. Shen
Affiliation:
Department of Materials Science and Engineering
S. Suresh
Affiliation:
Department of Materials Science and Engineering
I. A. Blech
Affiliation:
Materials Processing Center, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Get access

Abstract

The evolution of stresses due to the patterning and thermal loading of thin lines on Si wafers, and the consequent changes in the overall curvature of the wafer are studied theoretically and experimentally. The analysis involves finite element simulations within the context of generalized plane strain models. The analysis is capable of predicting the wafer curvature in directions parallel and perpendicular to the lines. These predictions compare reasonably well with experimental measurements of curvature made on model systems. The thickness, width and spacing of the patterned lines have been varied systematically, and the associated changes in the evolution of stresses and curvature have been determined. The non-uniform stress field within the fine lines is also analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 505
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jones, R. E. and Basehore, M. L., Appl. Phys. Lett. 50, p. 725 (1987).Google Scholar
2. Greenebaum, B., Sauter, A. I., Ffinn, P. A. and Nix, W. D., Appl. Phys. Lett. 58, p. 1845 (1991).Google Scholar
3. Sauter, A. I. and Nix, W. D., IEEE Trans. Comp. Hybrids Manufact. Technol. 15, p. 594 (1992).Google Scholar
4. Chidambarrao, Rodbell, K. P., Thouless, M. D. and DeHaven, P. W., in Materials Reliability in Microelectronics IV, edited by Borgesen, P., Coburn, J. C., Sanchez, J. E. Jr., Rodbell, K. P. and Filter, W. F. (Mater. Res. Soc. Symp. Proc. 338, Pittsburgh, PA, 1994), p. 261.Google Scholar
5. Mack, A. S. and Flinn, P., in Thin Films: Stresses and Mechanical Properties V, edited by Baker, S. P., Ross, C. A., Townsend, P. H., Volkert, C. A. and Borgesen, P. (Mater. Res. Soc. Symp. Proc. 356, Pittsburgh, PA, 1995), p. 465.Google Scholar
6. Besser, P. R., Marieb, T. M., Lee, J., Flinn, P. A. and Bravman, J. C., J. Mater. Res. 11, p. 184 (1996).Google Scholar
7. Shen, Y.-L., Suresh, S. and Blech, I. A., submitted to J. Appl. Phys., 1996.Google Scholar
8. Timoshenko, S., Strength of Materials, 3rd edition, Krieger, Robert E. Publishing Company, Huntington, New York, 1976, p. 88.Google Scholar