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Processing Induced Strain Relaxation in BaTiO3 Films

Published online by Cambridge University Press:  16 February 2011

E. Sanchez-Carambot ,
L.J. Martinez-Miranda ,
E. Smela ,
Y. Shi  and
J.J. Santlago-Aviles
E. Sanchez-Carambot
Affiliation:
University of Pennsylvania, Moore School of Electrical Engineering, 200 S. 33rd. St., Philadelphia, PA 19104.
L.J. Martinez-Miranda
Affiliation:
University of Pennsylvania, Moore School of Electrical Engineering, 200 S. 33rd. St., Philadelphia, PA 19104.
E. Smela
Affiliation:
University of Pennsylvania, Moore School of Electrical Engineering, 200 S. 33rd. St., Philadelphia, PA 19104.
Y. Shi
Affiliation:
University of Pennsylvania, Moore School of Electrical Engineering, 200 S. 33rd. St., Philadelphia, PA 19104.
J.J. Santlago-Aviles
Affiliation:
University of Pennsylvania, Moore School of Electrical Engineering, 200 S. 33rd. St., Philadelphia, PA 19104.
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Abstract

The development of integrated electronic devices has resulted in an increased interest in the study of ferroelectric ceramic films on silicon prepared by diverse methods. Some of these studies aim at the development of films whose ferroelectric properties equal or approximate those of the bulk ceramic. It is therefore important to attain a better understanding of the microstructure of these films and the relationship between the microstructure and the different film preparation methods. This study examines the strain field in such a film as a function of annealing time. The technique chosen was grazing incidence x-ray scattering (GIXS), and the material, thin films of BaTiO3 deposited on silicon (111) single crystals by metallo-organic deposition (MOD). The BaTiO3 {110} and {101} reflections were monitored. A substantial relaxation of the d-spacing of planes parallel to the surface was measured after a 64 hour annealing. The d-spacing of planes perpendicular to the surface remained essentially unchanged.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 205
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Marra, W.C., Eisenberg, P., and Cho, A.Y., J. Appl. Phys. 50, 6927 (1979).Google Scholar
2. Hanrahan, J., Sanchez-Carambot, E., Jiang, Q., Berry, D., and Santiago-Avilés, J.J., Proc. of First International Ceramic Science and Technology Congress, Am. Cer. Soc., Anaheim, CA (1989).Google Scholar
3. Hanrahan, J.R., Sanchez, E., Santiago, J.J., Berry, D.H., and Jiang, Q., Thin Solid Films, IN PRESS.Google Scholar