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Process and Manufacturing Challenges for High-K Gate Stack Systems

Published online by Cambridge University Press:  10 February 2011

M.C. Gilmer ,
T-Y Luo ,
H.R. Huff ,
M.D. Jackson ,
S. Kim ,
G. Bersuker ,
P. Zeitzoff ,
L. Vishnubhotla ,
G.A. Brown  and
R. Amos
...Show all authors
M.C. Gilmer
Affiliation:
SEMATECH, Austin, TX. 78741
T-Y Luo
Affiliation:
SEMATECH, Austin, TX. 78741
H.R. Huff
Affiliation:
SEMATECH, Austin, TX. 78741
M.D. Jackson
Affiliation:
SEMATECH, Austin, TX. 78741
S. Kim
Affiliation:
SEMATECH, Austin, TX. 78741
G. Bersuker
Affiliation:
SEMATECH, Austin, TX. 78741
P. Zeitzoff
Affiliation:
SEMATECH, Austin, TX. 78741
L. Vishnubhotla
Affiliation:
SEMATECH, Austin, TX. 78741
G.A. Brown
Affiliation:
SEMATECH, Austin, TX. 78741
R. Amos
Affiliation:
SEMATECH, Austin, TX. 78741
D. Brady
Affiliation:
SEMATECH, Austin, TX. 78741
V.H.C. Watt
Affiliation:
SEMATECH, Austin, TX. 78741
G. Gale
Affiliation:
SEMATECH, Austin, TX. 78741
J. Guan
Affiliation:
SEMATECH, Austin, TX. 78741
B. Nguyen
Affiliation:
SEMATECH, Austin, TX. 78741
G. Williamson
Affiliation:
SEMATECH, Austin, TX. 78741
P. Lysaght
Affiliation:
SEMATECH, Austin, TX. 78741
K. Torres
Affiliation:
SEMATECH, Austin, TX. 78741
F. Geyling
Affiliation:
SEMATECH, Austin, TX. 78741
C.F.H. Gondran
Affiliation:
SEMATECH, Austin, TX. 78741
J. A. Fair
Affiliation:
Novellus Corporation, San Jose, CA 95134
M.T. Schulberg
Affiliation:
Novellus Corporation, San Jose, CA 95134
T. Tamagawa
Affiliation:
Jet Process Corporation, New Haven, CT 06511
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Abstract

A design-of-experiments methodology was implemented to assess the commercial equipment viability to fabricate the high-K dielectrics Ta2O5, TiO2 and BST (70/30 and 50/50 compositions) for use as gate dielectrics. The high-K dielectrics were annealed in 100% or 10% O2 for different times and temperatures in conjunction with a previously prepared NH3 nitrided or 14N implanted silicon surface. Five metal electrode configurations—Ta, TaN, W, WN and TiN—were concurrently examined. Three additional silicon surface configurations were explored in conjunction with a more in-depth set of time and temperature anneals for Ta2O5. Electrical characterization of capacitors fabricated with the above high-K gate dielectrics, as well as SIMS and TEM analysis, indicate that the post high-K deposition annealing temperature was the most significant variable impacting the leakage current density, although there was minimal influence on the capacitance. Further studies are required, however, to clarify the physical mechanisms underlying the electrical data presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 323
Copyright
Copyright © Materials Research Society 1999

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