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Preparation and Properties of CdTe Films on Mo/Glass Substrates

Published online by Cambridge University Press:  31 January 2011

Vello Valdna ,
Maarja Grossberg ,
Hiie Jaan ,
Urve Kallavus ,
Valdek Mikli ,
Rainer Traksmaa  and
Mart Viljus
Vello Valdna
Affiliation:
[email protected], Tallinn Univ. of Technology, Dept. of Materials Sci., Ehitajate tee 5, Tallinn, 19086, Estonia, 3726203366, 3726202020
Maarja Grossberg
Affiliation:
[email protected], Tallinn Univ. of Technology, Tallinn, Estonia
Hiie Jaan
Affiliation:
[email protected], Tallinn University of Technology, Department of Materials Science, Tallinn, Harjumaa, Estonia
Urve Kallavus
Affiliation:
[email protected], Tallinn Univ. of Technology, Tallinn, Estonia
Valdek Mikli
Affiliation:
[email protected], Tallinn Univ. of Technology, Tallinn, Estonia
Rainer Traksmaa
Affiliation:
[email protected], Tallinn Univ. of Technology, Tallinn, Estonia
Mart Viljus
Affiliation:
[email protected], Tallinn Univ. of Technology, Tallinn, Estonia
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Abstract

Short-bandgap group II-VI compound cadmium telluride is widely used for the infrared optics, radiation detectors, and solar cells where p-type CdTe is needed. p-type conductivity of CdTe is mainly caused by the chlorine-based A-centers, and in part, by the less stable copper-oxygen complexes. As a rule, CdTe films are recrystallized by the help of a cadmium chloride flux that saturates CdTe with chlorine. In chlorine-saturated CdTe A-centers are converted to isoelectronic complexes that cause resistivity increasement of CdTe up to 9 orders of magnitude. Excess copper and oxygen or group I elements as sodium also deteriorate the p-type conductivity of CdTe like excess chlorine. p-type conductivity of CdTe can be restored e.g. by the vacuum annealing which removes excess chlorine from the film. Unfortunately, treatment that betters p-type conductivity of the CdTe film degrades the junction of the superstrate configuration cells. In this work we investigate possibilities to prepare p-type CdTe films on the molybdenum coated glass substrates. Samples were prepared by the vacuum evaporation and dynamic recrystallization of 6N purity CdTe on the top of Mo-coated glass substrates. Then samples were recrystallized with cadmium chloride flux under tellurium vapour pressure. Results of the test studies on the structure and electronic parameters of samples are presented and discussed.

Keywords

II-VIphotovoltaiccompound
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M08-24
Copyright
Copyright © Materials Research Society 2009

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