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Post-CMOS Integration of Nanomechanical Devices by Direct Ion Beam Irradiation of Silicon

Published online by Cambridge University Press:  03 August 2011

Francesc Pérez-Murano ,
G. Rius ,
J. Llobet  and
X. Borrisé
Francesc Pérez-Murano
Affiliation:
Institut de Microelectrònica de Barcelona (IMB-CNM, CSIC). Campus de la UAB, 08193 Bellaterra. Spain.
G. Rius
Affiliation:
Surface Science Laboratory. Toyota Technological Institute (TTI), 2-12-1 Hisakata, 468-8511 Nagoya. Japan
J. Llobet
Affiliation:
Institut de Microelectrònica de Barcelona (IMB-CNM, CSIC). Campus de la UAB, 08193 Bellaterra. Spain.
X. Borrisé
Affiliation:
Institut Català de Nanotecnologia (ICN). Campus de la UAB, 08193 Bellaterra. Spain
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Abstract

We present the development of CMOS compatible focused ion beam (FIB)-based method for the fabrication of nanomechanical devices. With only two step process, (i) patterning by direct exposure of silicon by the gallium beam and (ii) transfer of features to the structural layer by standard microfabrication silicon etching processes, operational devices are obtained. The ion beam modified silicon, acting as the etching mask, presents an outstanding robustness for both chemical and reactive ion etching process, enabling a simplified fabrication of nanomechanical devices with sub-micron resolution. As an example, single and double clamped silicon beams have been successfully produced. The compatibility check to guarantee the integrity of the electronic performance of CMOS circuits after the energetic beam irradiation is also investigated. Patterning based on direct ion beam exposure of silicon and etching presents advantages in comparison with more conventional lithography methods, such as electron beam lithography, since it is realized without the use of any resist media, which is especially challenging for the non-flat CMOS pre-fabricated substrates.

Keywords

ion-beam processingnanostructureion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1354: Symposium II – Ion Beams—New Applications from Mesoscale to Nanoscale , 2011 , mrss11-1354-ii09-02
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Cleland, A. N.. Foundation of Nanomechanics. From solid state devices to applications. Springer Verlag, 2003.Google Scholar
2. Ekinci, K.L., Yang, Y. T., Roukes, M. L.. J. Appl. Phys. 95, 2682 (2004)10.1063/1.1642738Google Scholar
3. Verd, J., Uranga, A., Abadal, G., Teva, J., Torres, F., Pérez-Murano, F., Fraxedas, J.. Appl. Phys. Lett. 91, 013501 (2007)10.1063/1.2753120Google Scholar
4. Arcamone, J., Sansa, M., Verd, J., Uranga, A., Abadal, G., Barniol, N., van den Boogaart, M., Brugger, J., Perez-Murano, F.. Small, 5, 176–180 (2009)10.1002/smll.200800699Google Scholar
5. Lassagne, B., Garcia-Sanchez, D., Aguasca, A., Bachtold, A.. Nanoletters 8, 3735 (2008)10.1021/nl801982vGoogle Scholar
6. Jensen, K., Kim, K., Zettl, A., Nature Nanotechnology 3, 5333 (2008)10.1038/nnano.2008.200Google Scholar
7. Abadal, G., Davis, Z. J., Helbo, B., Borrisé, X., Ruiz, R., Boisen, A., Campabadal, F., Esteve, J., Figueras, E., Pérez-Murano, F., Barniol, N.. Nanotechnology, 12, 100 (2001)10.1088/0957-4484/12/2/305Google Scholar
8. Davis, Z. J., Abadal, G., Helbo, B., Hansen, O., Campabadal, F., Pérez-Murano, F., Esteve, J., Figueras, E., Verd, J., Barniol, N., Boisen, A. Sensors and Actuators A 105, 311–319(2003)10.1016/S0924-4247(03)00208-5Google Scholar
9. Verd, J., Abadal, G., Villarroya, M., Teva, J., Uranga, A., Campabadal, F., Esteve, J., Figueras, E., Pérez-Murano, F., Davis, Z., Forsen, E., Boisen, A., Barniol, N. Jl of Microelectromechanical Systems, 14, 508–519 (2005)10.1109/JMEMS.2005.844845Google Scholar
10. Forsén, E., Abadal, G., Ghatnekar-Nilsson, S., Teva, J., Verd, J., Sandberg, R., Svendsen, W., Pérez-Murano, F., Esteve, J., Figueras, E., Campabadal, F., Montelius, L., Barniol, N., and Boisen, A.. Applied Physics Letters, 87, 04357, (2005)10.1063/1.1999838Google Scholar
11. Arcamone, J., van den Boogaart, M. A. F., Serra-Graells, F., Fraxedas, J., Brugger, J. and Pérez-Murano, F.. Nanotechnology 19, 305302 (2008)10.1088/0957-4484/19/30/305302Google Scholar
12. Gianuzzo, L.A. and Stevie, F.A., Ed. Introduction to focused ion beams. Springer. 2005 10.1007/b101190Google Scholar
13. Schmidt, B., Oswald, S., Bischoff, L.. Journal of the Electrochemical Society, 152, G875 (2005)10.1149/1.2051955Google Scholar
14. Cherukov, N., Grigoras, K., Peltonen, A., Franssila, S., Tottonen, I. Nanotechnology, 20, 065307 (2009)Google Scholar
15. Rius, G., Llobet, J., Borrisé, X., Mestres, N., Retolaza, A., Merino, S., Perez-Murano, F. J. Vac. Sci.Technol. B 27, 2691 (2009)10.1116/1.3253550Google Scholar
16. Rius, G., Llobet, J., Esplandiu, M. J., Solé, L., Borrisé, X., Perez-Murano, F. Microelec.Eng. 86, 892 (2009)10.1016/j.mee.2008.12.007Google Scholar
17. Klein, C., Platzgummer, E, Loeschner, H. Proceedings of SPIE 7545, DOI: .1117/12.863143, (2010)Google Scholar