Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T17:49:28.107Z Has data issue: false hasContentIssue false

Plasma Ion Implantation for Flat Panel Displays

Published online by Cambridge University Press:  03 September 2012

Chung Chan
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Shu Qin
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Yuanzhong Zhou
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Wei Liu
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Shuichi Wu
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Mankuan Michael Vai
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Ionel Bursuc
Affiliation:
Waban Technology, Inc., One DeAngelo Drive, Bedford, MA 01730
Jiqun Shao
Affiliation:
Eaton Corp., Semiconductor Equipment Operations, 108 Cherry Hill Drive, Beverly, MA 01915
Stuart Denholm
Affiliation:
Eaton Corp., Semiconductor Equipment Operations, 108 Cherry Hill Drive, Beverly, MA 01915
Get access

Abstract

Development of ion doping and hydrogenation equipment using plasma ion implantation (PII) is being studied. It is shown that low energy, high throughput operation could eliminate problems associated with etching, charging, cooling, and contamination. The applications of a new plasma source and neural network implementation optimization are also reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mishima, Y. and Takei, M, J. Appl. Phys. 75, 4933 (1994).Google Scholar
2. Qin, S., Chan, C., McGruer, N., and Warner, K., IEEE Trans. Plasma Sci. 19, 1272 (1991).Google Scholar
3. Qin, S. and Chan, C., J. Vac. Sci. and Tech. B 12, 962 (1994).Google Scholar
4. Cheung, N. W., Nucl. Instr. and Meth. B 55, 811 (1991).Google Scholar
5. Bernstein, J. D., Qin, S., Chan, C. and King, T.-J., IEEE Trans. Elect. Dev. 43, 1876 (1996).Google Scholar
6. Under development by Novapure Corp. and Matheson Electronic Gas Products.Google Scholar
7. Ziegler, J. F., Biersack, J.P. and Littmark, U., The Stopping Range of Ions in Solids, Pergamon Press, New York, 1985.Google Scholar
8. Kakinuma, H. and Mohri, M., Jpn. J. Appl. Phys. 34, L1325 (1995).Google Scholar
9. Li, J., Appl. Phys. Lett. 55, 2223 (1989).Google Scholar
10. Qin, S. and Chan, C., J. Elect. Mat. 23, 337 (1994).Google Scholar
11. Qin, S., Bernstein, J., Zhao, Z., Liu, W., Chan, C., Shao, J., and Denholm, S., J. Vac. Sci. Technol. B 13, 1994 (1995).Google Scholar
12. Lieberman, M. A., J. Appl. Phys. 66, 2926 (1989).Google Scholar
13. Scheuer, J. T., Shamim, M., and Conrad, J. R., J. Appl. Phys. 67, 1241 (1990).Google Scholar
14. Qin, S., Chan, C., McGruer, N., Browning, J., and Warner, K., IEEE Tran. Plas. Sci. 19, 1272 (1991).Google Scholar
15. Qin, S., Bernstein, J. D., and Chan, C., MRS Sym. Proceedings 396, 509 (1996).Google Scholar
16. Qin, S., Bernstein, J. D., and Chan, C., J. of Elec. Mat. 25, 507 (1996).Google Scholar
17. Kamins, T. I. and Marcoux, P. J., IEEE Electron Device Lett. 1, 159 (1980).Google Scholar
18. Wu, I., Huang, T., Jackson, W. B., Lewis, A.G. and Chiang, A., IEEE Electron Device Lett. 12, 181 (1991).Google Scholar
19. Baert, K., Murai, H., Kobayashi, K., Namizaki, H. and Nunoshita, M., Jpn. J. Appl. Phys. 32, 2601 (1993).Google Scholar
20. Bernstein, J. D., Qin, S., Chan, C. and King, T.-J., IEEE Electron Device Lett. 16, 421 (1995).Google Scholar
21. Qin, S., Nakatsugawa, T., Zhou, Y., Husein, I., Chan, C., and King, T.-J., IEEE Trans. Elec. Dev., submitted (1996).Google Scholar
22. Qin, S., Bernstein, J. D., Zhou, Y., Liu, W., Chan, C., and King, T.-J., Mat. Res. Soc. Symp. Proc. Vol.396, 1996 MRS.Google Scholar
23. Overberg, M., Eaton Corp., internal paper, (1994).Google Scholar
24. Qin, S., Zhou, Y., and Chan, C., Nucl. Instr. Meth. B, in press (1996).Google Scholar
25. Qin, S., Liu, W., Ye, J., Bursuc, I., and Chan, C., Plasma Source Sci. Technol. submitted (1996).Google Scholar
26. Wu, S., Vai, M., and Prasad, S., Proc. 1996 Asia Pacific Microwave Conf. (1996).Google Scholar