Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T02:41:12.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma Immersion Ion Implantation for Impurity Gettering in Silicon

Published online by Cambridge University Press:  21 February 2011

H. Wong ,
X. Y. Qian ,
D. Carl ,
N. W. Cheung ,
M. A. Lieberman ,
I. G. Brown  and
K. M. Yu
H. Wong
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;
X. Y. Qian
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;
D. Carl
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;
M. A. Lieberman
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;
I. G. Brown
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720.
K. M. Yu
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720.
Get access

Abstract

We have utilized plasma immersion ion implantation (PIII) to demonstrate effective gettering of metallic impurities in silicon wafers. Metallic impurities such as Ni, Cu or Au were intentionally diffused into Si as marker impurities. The Ar or Ne atoms were ionized in an electron cyclotron resonance (ECR) plasma chamber. The ions were accelerated by a negative voltage applied to the wafer and implanted into the wafer. The as-implanted saturation dose can be as high as 5×1016cm−2. After an annealing step at 1000°C for 1 hour in a N2 ambient, the retained doses and the amount of gettered impurities were measured with Rutherford backscattering spectrometry (RBS). With a retained Ar dose in 1015cm−2 range after annealing, the gettered Ni, Cu and Au were 3.0×1014cm−2, 3.0×1014cm−2 and 4.4×1013cm−2 respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 91
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Conrad, J. R., Radtke, L. L., Dodd, R. A., Worzala, F. J., and Tran, N. C., J. Appl. Phys. 62, 4591, (1987).Google Scholar
[2] Tendys, J., Donnelly, I. J., Kenny, M. J. and Pollock, J. T. A., Appl. Phys. Lett. 53 (22), 2143, (1988).Google Scholar
[3] Mizuno, B., Nakayama, I., Aoi, N., Kubota, M., and Komeda, T., Appl. Phys. Lett. 53 (21), 2059, (1988).Google Scholar
[4] Toshiro, Ono, Chiharu, Takahashi and Seitaro, Matsuo, J. Appl. Phys. 23, L534, (1984).Google Scholar
[5] Seidel, T. E., in “Material Issues in Silicon Integrated Circuit Processing”, Wittmer, M., Stimmell, J., and Strathman, M., eds. (Materials Research Society, Pittsburgh, 1986), 3. Google Scholar