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Plasma Enhanced OMCVD Atomic Layered Growth of Y-BA-CU Oxide Films

Published online by Cambridge University Press:  16 February 2011

S. J. Duray ,
D. B. Buchholz ,
S. N. Song ,
D. S. Richeson ,
J. B. Ketterson ,
T. J. Marks  and
R. P. H. Chang
S. J. Duray
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
D. B. Buchholz
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
S. N. Song
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
D. S. Richeson
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
J. B. Ketterson
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
T. J. Marks
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
R. P. H. Chang
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
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Abstract

We report the results of a pulsed organo-metallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10-4 -10-2 torr) and low substrate temperature (600 to 700 C) using organo-metallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organo-metallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films ([Tc (R=0)=90.5K] and Jc (77K, 50K gauss)=l.l×105 A/cm2) is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in-situ processing of multilayer structures (e.g. junctions).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 303
Copyright
Copyright © Materials Research Society 1991

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References

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