Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T17:59:01.808Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence Properties of Graded Composition MgxZn1−xSe Crystals

Published online by Cambridge University Press:  21 February 2011

H. J. Lozykowski ,
X. D. Jiang ,
J. L. Merz  and
S. Barbara
H. J. Lozykowski
Affiliation:
Ohio University
X. D. Jiang
Affiliation:
University of Heilongjian, Harbin, PRC
J. L. Merz
Affiliation:
University of Calfiornia
Get access

Abstract

The photoluminescence properties of MgxZn1−xSe solid solution grown on ZnSe substrate by a closed solid-state diffusion technique have been investigated. The depth profiles of the diffusion region shows distinguished surface layer and thick graded layer. The PL. spectra of MgxZn1−xSe side of the sample excited with a wide range of excitation energy shift the edge emission band toward longer wavelengths with decreasing excitation energy. The edge emission spectrum was found to shift toward the shorter wavelength with electric field applied parallel to the compositional gradient ofMgxZn1−xSe-ZnSe heterostructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 171
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lozykowski, H. J., Holtz, P. O., and Monemar, B., J. of Electronic Materials, 12, 653 (1983).Google Scholar
2. Hill, R., J. Phys. C: Solid State Phys., 7, 521 (1974).Google Scholar
3. Giriet, W., Furdyne, J. K., Semiconductors and semimetals, Vol. 25, (1988).Google Scholar
4. Mittendorf, Von H., Z. Physik, 183, 113 (1965).Google Scholar
5. Ruyven, L. J. van and Williams, F. E., Am. J. Physics., 35, 705 (1967).Google Scholar
6. Gora, T. and Williams, F. E., Phys. Rev., 177, 1179, (1969).Google Scholar
7. Ruyven, L. J. van and Williams, F. E., Solid State Electronics, 10, 1159 (1967).Google Scholar
8. Hill, R. and Williams, F. E., Appl. Phys. Letters, 11, 269 (1967).Google Scholar
9. Heaton, J. L., Hammon, G. H., and Goldmer, E. B., Appl. Phys. Letters, 20, (1972).Google Scholar
10. Mora, S., Romeo, N., and Tarricone, L., Solid State Communications, 33, 1147 (1980).Google Scholar