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Photoemission Study of the a-Si-H/a-SiOx:H and a-Si:H/a-SiN:H Interface Formation

Published online by Cambridge University Press:  26 February 2011

W. Eberhardt ,
B. Abeles ,
L. Yang ,
H. Stasiewski  and
D. Sondericker
W. Eberhardt
Affiliation:
Exxon Research and Engineering Co., Route 22E, Annandale, NJ 08801, USA
B. Abeles
Affiliation:
Exxon Research and Engineering Co., Route 22E, Annandale, NJ 08801, USA
L. Yang
Affiliation:
Exxon Research and Engineering Co., Route 22E, Annandale, NJ 08801, USA
H. Stasiewski
Affiliation:
Exxon Research and Engineering Co., Route 22E, Annandale, NJ 08801, USA
D. Sondericker
Affiliation:
NSLS, Brookhaven National Lab, Upton, NY 11973, USA
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Abstract

We report a study of the interface formation between a-Si:H and a-SiOx:H or a-SiN:H in the coverage regime from a submonolayer to a few layers. The films were grown by plasma assisted CVD and characterized by photoemission. Our studies show that the growth mechanism is different for a-SiOx:H on a-Si:H than for a-Si:H on a a-Si:Ox:H. The growth of the a-SiNx:H/a-Si:H interface on the other hand is independent of the direction.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 647
Copyright
Copyright © Materials Research Society 1987

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References

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