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Photoelectric-Yield Studies of c-Si/a-Si:H Interfaces
Published online by Cambridge University Press: 15 February 2011
Abstract
We report the first yield spectroscopy study on well characterized c-Si/a-Si:H heterojunctions grown in situ under UHV conditions. We find that this spectroscopy, when operated in the constant final state mode, allows a direct and precise determination of the valence-band discontinuity at the interface. A value of δEv = 0.44 ± 0.02 eV was found for the discontinuity.
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- Copyright © Materials Research Society 1995
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