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Photoassisted MBE of II-VI Semiconductor Films and Superlattices

Published online by Cambridge University Press:  21 February 2011

N.C. Giles ,
R.L. Harper ,
J.W. Han  and
J.F. Schetzina
N.C. Giles
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695-8202
R.L. Harper
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695-8202
J.W. Han
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695-8202
J.F. Schetzina
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

This paper will review recent progress in the growth of II-VI semiconductors at NCSU by photoassisted molecular beam epitaxy, an energy-assisted growth technique in which the substrate is illuminated during the entire growth process. The materials focused on here include undoped and As-doped CdTe, As-doped HgCdTe, and In-doped HgCdTe. These materials were grown as single epilayers, as well as incorporated in other structures including heterojunctions and modulation-doped superlattices. The photo-assist during growth has allowed a substantial reduction in substrate growth temperatures, as well as an enhanced activation of n-type and p-type dopant species. The structural, electrical, and optical properties of the samples will be discussed below.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 227
Copyright
Copyright © Materials Research Society 1990

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References

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