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Photoassisted MBE of II-VI Semiconductor Films and Superlattices

Published online by Cambridge University Press:  21 February 2011

N.C. Giles ,
R.L. Harper ,
J.W. Han  and
J.F. Schetzina
N.C. Giles
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695-8202
R.L. Harper
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695-8202
J.W. Han
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695-8202
J.F. Schetzina
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

This paper will review recent progress in the growth of II-VI semiconductors at NCSU by photoassisted molecular beam epitaxy, an energy-assisted growth technique in which the substrate is illuminated during the entire growth process. The materials focused on here include undoped and As-doped CdTe, As-doped HgCdTe, and In-doped HgCdTe. These materials were grown as single epilayers, as well as incorporated in other structures including heterojunctions and modulation-doped superlattices. The photo-assist during growth has allowed a substantial reduction in substrate growth temperatures, as well as an enhanced activation of n-type and p-type dopant species. The structural, electrical, and optical properties of the samples will be discussed below.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 227
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Bicknell, R.N., Giles, N.C., and Schetzina, J.F., Appl. Phys. Lett. 49, 1095 (1986).Google Scholar
2. Bicknell, R.N., Giles, N.C., and Schetzina, J.F., Appl. Phys. Lett. 49, 1735 (1986).Google Scholar
3. Bicknell, R.N., Giles, N.C., Schetzina, J.F., and Hitzman, C., J. Vac. Sci. Technol. A 5, 3059 (1987).Google Scholar
4. Bicknell, R.N., Giles, N.C., and Schetzina, J.F., Appl. Phys. Lett. 50, 691 (1987).Google Scholar
5. Han, Jeong W., Hwang, S., Lansari, Y., Harper, R.L., Yang, Z., Giles, N.C., Cook, J.W. Jr., Schetzina, J.F., and Sen, S., Appl. Phys. Lett. 54, 63 (1989).Google Scholar
6. Dreifus, D.L., Kolbas, R.M., Tassitino, J.R., Harper, R.L., Bicknell, R.N., and Schetzina, J.F., J. Vac. Sci. Technol. A 6, 2722 (1988).Google Scholar
7. Dreifus, D.L., Kolbas, R.M., Harper, R.L., Tassitino, J.R., Hwang, S., and Schetzina, J.F., Appl. Phys. Lett. 53, 1279 (1988).Google Scholar
8. Dreifus, D.L., Kolbas, R.M., Han, J.W., Cook, J.W. Jr., and Schetzina, J.F., to appear in J.Vac. Sci. Technol. (Proc. of 1989 U.S. Workshop on MCT).Google Scholar
9. Cook, J.W. Jr., Harris, K.A., and Schetzina, J.F., Mater. Res. Soc. Symp. Proc. Vol. 90, 419 (1987).Google Scholar
10. Hwang, S., Harper, R.L., Harris, K.A., Giles, N.C., Bick-nell, R.N., Cook, J.W. Jr., Schetzina, J.F., and Chu, M., J. Vac. Sci. Technol. A 6, 2821 (1988).Google Scholar
11. Giles, N.C., Bowers, K.A., Harper, R.L. Jr., Hwang, S., and Schetzina, J.F., to appear in J. Crystal Growth (Proc. of 1989 Int. II-VI Conf.).Google Scholar
12. Giles, N.C., Hwang, S., Schetzina, J.F., McDevitt, S., and Johnson, C.J., J. Appl. Phys. 64, 2656 (1988).Google Scholar
13. Benson, J.D. and Summers, C.J., J. Crystal Growth 86, 354 (1988).Google Scholar
14. Arias, J.M., Shin, S.H., Cooper, D.E., Zandian, M., Pasko, J.G., Gertner, E.R., DeWames, R.E., and Singh, J., to appear in J. Vac. Sci. Technol. (Proc. of 1989 U.S. Workshop on MCT).Google Scholar
15. Ossau, W., Kuhn, T.A., and Bicknell-Tassius, R.N., to appear in J. Crystal Growth (Proc. of 1989 Int. II-VI Conf.).Google Scholar
16. Bicknell-Tassius, R.N., Waag, A., Wu, Y.S., Kuhn, T.A., and Ossau, W., to appear in J. Crystal Growth (Proc. of 1989 Int. II-VI Conf.).Google Scholar
17. Harper, R.L. Jr., Hwang, S., Giles, N.C., Schetzina, J.F., Dreifus, D.L., and Myers, T.H., Appl. Phys. Lett. 54, 170 (1989).Google Scholar
18. Han, Jeong W., Hwang, S., Lansari, Y., Harper, R.L., Yang, Z., Giles, N.C., Cook, J.W. Jr., Schetzina, J.F., and Sen, S., J. Vac. Sci. Technol. A 7, 305 (1989).Google Scholar
19. Schetzina, J.F., Han, J.W., Lansari, Y., Giles, N.C., Yang, Z., Hwang, S., and Cook, J.W. Jr., to appear in J. Crystal Growth (Proc. of 1989 Int. II-VI Conf.).Google Scholar
20. Horikoshi, Y., in Semiconductors and Semimetals, Vol. 22, Part C, Chapter 3, ed. Tsang, W.T. (Academic Press Inc., 1985) p.93.Google Scholar
21. Haug, A., Semicond. Sci. and Technol. 4, 803 (1989).Google Scholar
22. Giles, N.C., Han, J.W., Cook, J.W. Jr., and Schetzina, J.F., Appl. Phys. Lett. 55, 2026 (1989).Google Scholar
23. Mahavadi, K.K., Bleuse, J., Chu, X., and Faurie, J.P., Appl. Phys. Lett. 55, 1285 (1989).Google Scholar