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Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)

Published online by Cambridge University Press:  15 February 2011

H.P. Gillis ,
M.B. Christopher ,
K.P. Martin  and
D.A. Choutov
H.P. Gillis
Affiliation:
Department of Chemistry and Biochemistry, UCLA, Los Angeles, CA 90095.
M.B. Christopher
Affiliation:
Department of Chemistry and Biochemistry, UCLA, Los Angeles, CA 90095.
K.P. Martin
Affiliation:
Microelectronics Research Center, Georgia Tech, Atlanta, GA 30332
D.A. Choutov
Affiliation:
Microelectronics Research Center, Georgia Tech, Atlanta, GA 30332
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Abstract

Fabricating device structures from the III-N wide ba-ndgap semiconductors requires anisotropoic dry etching processes that leave smooth surfaces with stoichiometric composition after transferring high-resolution patterns with vertical sidewalls. The purpose of this article is to describe results obtained by a new low-damage dry etching technique that provides an alternative to the standard ion-enhanced dry etching methods in meeting these demands for processing the HI-N materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G8.2
Copyright
Copyright © Materials Research Society 1999

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