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Partial Dislocation Mobility in GaAS

Published online by Cambridge University Press:  26 February 2011

B. C. De Cooman  and
C.B. Carter
B. C. De Cooman
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca NY 14853
C.B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca NY 14853
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Abstract

The dislocation loop shape in high stress deformed GaAs can be used to obtain information on the relative velocity of individual dislocation segments. It is shown that 30/90 β-dislocations and 90/30 β-dislocations have different velocities. A variety of loop shapes observed can be modelled by focussing on differences in mobility of individual kinks. It is shown that the observation of faulted dipoles is only possible in high stress p-type GaAs in which the screw dislocation segments have appreciable velocity at the low temperatures used during the deformation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 253
Copyright
Copyright © Materials Research Society 1987

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References

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