Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T19:43:30.577Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxygen Precipitation and Thermal Donors in Silicon

Published online by Cambridge University Press:  28 February 2011

Ronald C. Newman
Ronald C. Newman*
Affiliation:
J. J. Thomson Physical Laboratory University of Reading, P. O. Box 220. Whiteknights, Reading, Berks, RG6 2AF, U.K.
Get access

Abstract

Oxygen in silicon precipitates with second order kinetics at the normal diffusion rate at 450° C and there Is evidence for self-Interstitial generation. These findings are discussed In relation to thermal donors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 205
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Livingston, F. M., Messoloras, S., Newman, R. C., Pike, B.C., Stewart, R. J., Blnns, M. J., Brown, W. P. and Wilkes, J. G., J. Phys. C. Solid State Phys. 17, 6253 (1984).Google Scholar
2. Newman, R.C., Oates, A. S. and Livingston, F. M., J. Phys. C: Solid State Phys. 16, L667 (1983).Google Scholar
3. Newman, R.C., J. Phys. C: Solid State Phys. 18, L967 (1985).Google Scholar
4. Bergholz, W., Binns, M. J., Booker, G. R., Hutchison, J., Kinder, S. H., Messoloras, S., Newman, R. C., Stewart, R. J. and Wilkes, J.G.. To be published.Google Scholar
5. Benton, J. L., Kimerling, L. C. and Stavola, M., Physica 1168, 271 (1983).Google Scholar
6. Oates, A.S., Newman, R. C., Tucker, J. H.. Davies, G. and Lightowlers, E. C., M.R.S. Fall Meeting, Boston, Vol. 59, (1985), to be published.Google Scholar
7. Newman, R.C., Tipping, A.K. and Tucker, J.H., J. Phys. C:Solid State Phys. 18, L861 (1985).Google Scholar
8. Newman, R.C., Claybourn, M., Kinder, S.H., Messoloras, S., Oates, A.S. and Stewart, R.J., E.C.S. 5th Int. Sym. on Si Mat. Scl. and Tech.. Boston, to be published (1986).Google Scholar
9. Corbett, J.W.. Watkins, G.D. and McDonald, R.S., Phys. Rev. 135A, 1381 (1964).CrossRefGoogle Scholar
10. Gösele, U. and Tan, T.Y., Appl. Phys. A 28, 79 (1982).Google Scholar