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Optical Studies of porous Silicon

Published online by Cambridge University Press:  25 February 2011

T. Lin ,
M. E. Sixta ,
J. N. Cox  and
M. E. Delaney
T. Lin
Affiliation:
Intel Corporation, Components Research, Santa Clara, CA
M. E. Sixta
Affiliation:
Intel Corporation, Components Research, Santa Clara, CA
J. N. Cox
Affiliation:
Intel Corporation, Components Research, Santa Clara, CA
M. E. Delaney
Affiliation:
Intel Corporation, Components Research, Santa Clara, CA
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Abstract

The optical properties of both electrochemically anodized and chemically stain-etched porous silicon are presented. Fourier transform infrared (FTIR) spectroscopy showed that absorbance in stain-etched samples was 3x and 1.7x greater than in anodized samples for the SiH/SiH2 stretch and scissors-bending modes, respectively. Also, oxygen is detected in stain-etched samples immediately after formation, unlike anodized samples. Photoluminescence measurements showed different steady state characteristics. Electrochemical-etched silicon samples stored in air increased in photoluminescent intensity over time, unlike the stain-etched samples. A photoluminescent device made by anodization on epitaxial p-type material (0.4 Ωm) on n-type substrate (0.1 Ω-cm) did not exhibit electroluminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 379
Copyright
Copyright © Materials Research Society 1993

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