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Optical Spectroscopy of Silicon-On-Insulator Waveguide Photonic Crystals

Published online by Cambridge University Press:  15 March 2011

D. Bajoni
Affiliation:
INFM and Dipartimento di Fisica “A. Volta”, via Bassi 6, I-27100 Pavia, Italy
M. Galli
Affiliation:
INFM and Dipartimento di Fisica “A. Volta”, via Bassi 6, I-27100 Pavia, Italy
M. Belotti
Affiliation:
INFM and Dipartimento di Fisica “A. Volta”, via Bassi 6, I-27100 Pavia, Italy
F. Paleari
Affiliation:
INFM and Dipartimento di Fisica “A. Volta”, via Bassi 6, I-27100 Pavia, Italy
M. Patrini
Affiliation:
INFM and Dipartimento di Fisica “A. Volta”, via Bassi 6, I-27100 Pavia, Italy
G. Guizzetti
Affiliation:
INFM and Dipartimento di Fisica “A. Volta”, via Bassi 6, I-27100 Pavia, Italy
D. Gerace
Affiliation:
INFM and Dipartimento di Fisica “A. Volta”, via Bassi 6, I-27100 Pavia, Italy
M. Agio
Affiliation:
INFM and Dipartimento di Fisica “A. Volta”, via Bassi 6, I-27100 Pavia, Italy
L.C. Andreani
Affiliation:
INFM and Dipartimento di Fisica “A. Volta”, via Bassi 6, I-27100 Pavia, Italy
Y. Chen
Affiliation:
Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France Département de Chimie, Ecole Normale Supérieure, 24 Rue Lhomond, 75231 Paris Cedex 05, France
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Abstract

We report on a complete optical investigation on two-dimensional silicon-on-insulator (SOI) waveguide photonic crystals obtained by electron beam lithography and reactive ion etching. The dispersion of photonic modes is fully investigated both above and below the light-line by means of angle- and polarization-resolved micro-reflectance and attenuated total reflectance measurements.

The investigated samples consisted in a) large area (300 × 300 μm2) two-dimensional (2D) triangular lattices of air holes containing repeated line–defects; b) small area triangular lattices of holes with different number of periods and /or line defects integrated in a ridge type waveguide structure.

In the case of large area samples, variable-angle reflectance and ATR is measured from the sample surface in a wide spectral range from 0.2 to 2 eV both in TE and TM polarizations. The sharp resonances observed in the polarized reflectance and ATR spectra allow mapping of the photonic dispersion of both radiative and guided modes. Experimentally determined and compared to those calculated by means of an expansion on the basis of the waveguide modes.

In the case of ridge type waveguide-integrated photonic crystals, transmission is measured in the 0.9-1.7 eV spectral range by an edge-coupling technique. Transmission spectra exhibit significant attenuation corresponding to the photonic gaps along the Γ–M and Γ–K directions respectively, even when a small number of hole periods is integrated in the ridge waveguide. Good agreement is obtained by comparing the measured transmission spectra with the calculated photonic bands.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

[1] Joannopoulos, J.D., Meade, R.D., Winn, J.N., Photonic Crystals Molding the Flow of Light, Princeton: Princeton University Press, 1995.Google Scholar
[2] Yablonovitch, E., Gmitter, T.J., Leung, K.M., Phys. Rev. Lett., vol. 67.p. 4753, 1990.Google Scholar
[3] Sakoda, K., Optical Properties of Photonic Crystals, Springer Verlag, 2001.Google Scholar
[4] See papers in IEEE J. Quantum Electron. vol. 38, Feature section on photonic crystal structures and applications, Krauss, T.F. and Baba, T., Ed., 2002.Google Scholar
[5] Johnson, H., Joannopoulos, J.D., Photonic Crystals: the Road from Theory to Practice, Kluwer Academic Publishers, 2002.Google Scholar
[6] Peyrade, D., Chen, Y., Talneau, A., Patrini, M., Galli, M., Andreani, L.C., Silberstein, E., Lalanne, P., Microelectron. Engin., vol 61–62 p. 529, 2002.Google Scholar
[7] Astratov, V. N., Whittaker, D. M., Culshaw, I. S., Stevenson, R. M., Skolnick, M. S., Krauss, T. F. and Rue, R. M. De La, Phys. Rev. B, vol. 60 p. R16255,1999.Google Scholar
[8] Astratov, AV. N., Culshaw, I. S., Stevenson, R. M., Whittaker, D. M., Skolnick, M. S., Krauss, T. F., and Rue, R. M. De La, J. Lightwave Technol., vol. 17 p. 2050, 1999.Google Scholar
[9] Pacradouni, V., Mandeville, W. J., Cowan, A. R., Paddon, P., Young, J. F., and Johnson, S. R., Phys. Rev. B vol. 62 p. 4204, 2000.Google Scholar
[10] Galli, M., Belotti, M., Paleari, F., Bajoni, D., Patrini, M., Guizzetti, G., Gerace, D., Agio, M., Andreani, L.C., Chen, Y., submitted to Phys. Rev. B.Google Scholar
[11] Andreani, L.C. and Agio, M., in [4], p. 891.Google Scholar
[12] Andreani, L.C. and Agio, M., Appl. Phys. Lett., vol. 82 p. 2011, 2003.Google Scholar