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Optical Direct and Indirect Excitation of Er3+ Ions in Silicon

Published online by Cambridge University Press:  25 February 2011

A. Majima ,
S. Uekusa ,
K. Ootake ,
K. Abe  and
M. Kumagai
A. Majima
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
S. Uekusa
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
K. Ootake
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
K. Abe
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
M. Kumagai
Affiliation:
Kanagawa High-Technology Foundation, Kawasaki, Kanagawa, 214, Japan
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Abstract

Optical direct and indirect excitation of erbium (Er) ions in silicon substrates was performed in order to investigate the high efficiency of Er3+− related 1.54μm emission (4I13/2→4I15/2) for direct excitation that is not concerned with the indirect band gap and low quantum efficiency of a Si host. The samples were prepared by ion-implantation or thermal diffusion methods. In each sample, photoluminescence (PL) showed the peaks originating from 4I13/2→4I15/2 of Er3+ ions.

In Er thermally diffused samples, optical excitation for energy level 4I11/2 of Er3+ ions was successfully effected by photoluminescence excitation spectroscopy (PLE). The PLE spectra consisted six peaks (963.1nm, 965.0nm, 976.lnm, 978.9nm and 980.9nm) which were caused by direct excitation (4I15/2→4I11/2) of Er3+ ions. The emission directly excited is about 2 times more intense than the indirectly excited emission. The six peaks originating from the splitting of the 4I11/2 levels meant that Er3+ ions were in the sites of noncubic symmetry. The samples prepared by Er ion-implantation did not show the effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 435
Copyright
Copyright © Materials Research Society 1993

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