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Optical and Electrical Properties of Sol-Gel Processed Gd Doped Ferroelectric PLZT Thin Films

Published online by Cambridge University Press:  01 February 2011

Reji Thomas ,
Shoich Mochizuki ,
Toshiyuki Mihara  and
Tadashi Ishida
Reji Thomas
Affiliation:
AIST Kansai National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorioka, Ikeda, Osaka 563 8577, Japan.
Shoich Mochizuki
Affiliation:
AIST Kansai National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorioka, Ikeda, Osaka 563 8577, Japan.
Toshiyuki Mihara
Affiliation:
AIST Kansai National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorioka, Ikeda, Osaka 563 8577, Japan.
Tadashi Ishida
Affiliation:
AIST Kansai National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorioka, Ikeda, Osaka 563 8577, Japan.
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Abstract

Gadolinium(Gd) doped ferroelectric lead lanthanum zirconate titanate (PLGZT 6/2/65/35) thin films were prepared by sol-gel spin coating technique. Fused silica and platinized silicon were used as substrates. Two-step pre-annealing heat treatment was employed to prepare crack free films. Annealing temperature was optimized though the x-ray diffraction studies to prepare films in single perovskite phase. Effects of Pb concentration and the seeding layer on the crystallization were studied. Optical transmission spectra were recorded and from this, refractive index, extinction coefficient and thickness were calculated for amorphous films on fused silica annealed at 400°C. In addition, the resultant films showed more than 60% transmission in the visible region. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. Ferroelectric properties of crystalline films were studied by plotting the P-E hysteresis loop.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 718: Symposium D – Perovskite Materials , 2002 , D10.5
Copyright
Copyright © Materials Research Society 2002

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