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Optical and Cyclotron Resonance Investigations on GaInP/GaAs Epitaxial Layers
Published online by Cambridge University Press: 21 February 2011
Abstract
Ga0.5In0.5P has been investigated using optically detected cyclotron resonance and photoluminescence techniques. For the disordered alloy, the electron mass is determined to m*=0.092 m0, and for ordered material (band gap reduction ~ 50 meV) the value m*=0.088 m0 is found. The experimentally deduced values are compared with those obtained from a five-band kp calculation.
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- Copyright © Materials Research Society 1994