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On the Thermoelectric Power in Ultrathin Films of A3IIB2V Semiconductors Under Magnetic Quantization

Published online by Cambridge University Press:  15 February 2011

Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Telecommunication Engineering, University of Jadavpur, Calcutta-700032, India
Badal De
Affiliation:
Department Of Electrical Engineering, John Brown E and Cinc., 333 Ludlow Street, P.O. Box-1422, Connecticut-06902, U.S.A.
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Abstract

An attempt is made to study the thermoelectric power in ultrathin films of semiconductors under magnetic quantization by including all types of aniso tropies in the energy spectrum within the domain of theory, and taking n-Cd3As2 as an example. It is found that, the magne to-thermopower decreases with increasing surface electron concentration and also changes in an oscillatory manner with film thickness respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Aina, O., Mathingly, M., Juan, F.Y. Bhattacharyya, P. K., Appl. Phys. Letts. 50, 43 (1989).Google Scholar
2. Ghatak, K.P., Biswas, S.N., J.Vac. Sci. Tech. 7B, 104(1989).Google Scholar
3. Tsidilkovskii, I. M., Band Structure of semiconductors, Pergamon Press, Oxford, 1982.Google Scholar
4. Sirmaski, A. and Elfres, T., J. Exp. Theo. Phys. 104, 109 (1991)Google Scholar