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On The Photoemission From Quantum Confined Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

Kamakhya P. Ghatak  and
B. De
Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Telecommunication Engineering, University of Jadavpur, Calcutta 700032, India
B. De
Affiliation:
Department of Electrical Engineering, John Browne and Cinc, 333 Ludlow Street, P. 0. Box 1422, Stamford, Connecticut 06902, USA
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Abstract

In this paper, we have studied the photoemission from quantum wells (QWs), quantum well wires (QWWs) and quantum dots (QDs) of degenerate Kane-type semiconductors, on the basis of a newly derived electron dispersion law considering all types of anisotropies within the framework of k.p formalism. It is found, taking n-Cd3 As2 as an example, that the photoemission increases with increasing photon energy in a ladder-like manner and also exhibits oscillatory dependences with changing electron concentration and with film thickness, for all types of quantum confinement. The photoemission current density is greatest in QDs and least in QWWs. In addition, the theoretical results are in agreement with the experimental observation as reported elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 237
Copyright
Copyright © Materials Research Society 1992

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